Takahiro Iizuka

Takahiro Iizuka

Hiroshima University - Higashihiroshima / Japan
Engineering & Technology / Electrical & Electronic Engineering
AD Scientific Index ID: 402685
広島大学
person_outline Takahiro Iizuka's MOST POPULAR ARTICLES
1-) HiSIM2: Advanced MOSFET model valid for RF circuit simulationM Miura-Mattausch, N Sadachika, D Navarro, G Suzuki, Y Takeda, ...IEEE Transactions on Electron Devices 53 (9), 1994-2007, 20061152006
2-) A comparison of numerical solutions of the Boltzmann transport equation for high-energy electron transport siliconA Abramo, L Baudry, R Brunetti, R Castagne, M Charef, F Dessenne, ...IEEE Transactions on electron devices 41 (9), 1646-1654, 1994911994
3-) The second-generation of HiSIM_HV compact models for high-voltage MOSFETsHJ Mattausch, M Miyake, T Iizuka, H Kikuchihara, M Miura-MattauschIEEE transactions on electron devices 60 (2), 653-661, 2012472012
4-) Compact reliability model for degradation of advanced p-MOSFETs due to NBTI and hot-carrier effects in the circuit simulationC Ma, HJ Mattausch, M Miyake, T Iizuka, M Miura-Mattausch, ...2013 IEEE International Reliability Physics Symposium (IRPS), 2A. 3.1-2A. 3.6, 2013372013
5-) Advanced short-channel-effect modeling with applicability to device optimization—Potentials and scalingFÁ Herrera, Y Hirano, M Miura-Mattausch, T Iizuka, H Kikuchihara, ...IEEE Transactions on Electron Devices 66 (9), 3726-3733, 2019252019