Takashi Ando

Takashi Ando

IBM Corporation - New York / United States
Others
AD Scientific Index ID: 4465480
person_outline Takashi Ando's MOST POPULAR ARTICLES
1-) Semiconductor devices with varying threshold voltage and fabrication methods thereof US Patent 9,748,145, 2017
2-) Enabling enhanced reliability and mobility for replacement gate planar and finfet structures US Patent App. 14/696,015, 2015
3-) FinFET parasitic capacitance reduction using air gap US Patent 8,637,384, 2014
4-) Ultimate Scaling of High-κ Gate Dielectrics: Higher-κ or Interfacial Layer Scavenging? Materials 5 (3), 478-500, 2012
5-) A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications 2011 International Electron Devices Meeting, 28.1. 1-28.1. 4, 2011