Talapady Srivatsa Bhat

Talapady Srivatsa Bhat

Samsung Electronics, South Korea - Gyeonggi / South Korea
Engineering & Technology / Metallurgical & Materials Engineering
AD Scientific Index ID: 4741841
삼성전자, 한국
person_outline Talapady Srivatsa Bhat's MOST POPULAR ARTICLES
1-) Indentation of transversely isotropic power-law hardening materials: computational modelling of the forward and reverse problems Philosophical Magazine 93 (36), 4488-4518, 2013
2-) Abnormal silicon-germanium (SiGe) epitaxial growth in FinFETs IEEE Transactions on Semiconductor Manufacturing 33 (2), 291-294, 2020
3-) Removing Organic Residues Using Backside Brush Scrubber Clean ECS Transactions 69 (8), 109, 2015
4-) Trade-off between gate oxide integrity and transistor performance for FinFET technology ECS Journal of Solid State Science and Technology 6 (8), N137, 2017
5-) Parameters influencing unwanted growth during epitaxial growth of SiGe 2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC …, 2016