Tao Yu

Tao Yu

Massachusetts Institute of Technology - Cambridge / United States
Engineering & Technology / Computer Science
AD Scientific Index ID: 4303833
person_outline Tao Yu's MOST POPULAR ARTICLES
1-) A new self-aligned quantum-well MOSFET architecture fabricated by a scalable tight-pitch process 2013 IEEE International Electron Devices Meeting, 16.2. 1-16.2. 4, 2013
2-) Investigation on variability in metal-gate Si nanowire MOSFETs: Analysis of variation sources and experimental characterization IEEE transactions on electron devices 58 (8), 2317-2325, 2011
3-) Reducing power consumption for time-of-flight depth imaging US Patent 10,841,491, 2020
4-) Investigations on line-edge roughness (LER) and line-width roughness (LWR) in nanoscale CMOS technology: Part I–modeling and simulation methodX Jiang, R Wang, T Yu, J Chen, R HuangIEEE Transactions on electron devices 60 (11), 3669-3675, 2013502013
5-) Reducing power consumption for time-of-flight depth imagingC Mathy, S Demirtas, B Huo, D Gajaria, JA Goldberg, N Le Dortz, T Yu, ...US Patent 10,841,491, 2020492020