Tobias Schulz

Tobias Schulz

Leibniz-Institut für Kristallzüchtung - Rome / Germany
Others
AD Scientific Index ID: 4434132
Leibniz Institute for Crystal Growth
person_outline Tobias Schulz's MOST POPULAR ARTICLES
1-) On the bulk β-Ga2O3 single crystals grown by the Czochralski method Journal of Crystal Growth 404, 184-191, 2014
2-) Epitaxial stabilization of pseudomorphic α-Ga2O3 on sapphire (0001) Applied physics express 8 (1), 011101, 2014
3-) On the nature and temperature dependence of the fundamental band gap of In2O3 physica status solidi (a) 211 (1), 54-58, 2014
4-) Step-flow growth in homoepitaxy of β-Ga2O3 (100)—The influence of the miscut direction and faceting Apl Materials 7 (2), 2019
5-) Evolution of planar defects during homoepitaxial growth of β-Ga2O3 layers on (100) substrates—A quantitative model Journal of Applied Physics 120 (22), 2016