Toiyob Hossain

Toiyob Hossain

Bangladesh University of Engineering and Technology - Dhaka / Bangladesh
Engineering & Technology / Electrical & Electronic Engineering
AD Scientific Index ID: 4949804
বাংলাদেশ প্রকৌশল বিশ্ববিদ্যালয়
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1-) GaN Ring Oscillators Operational at 500° C Based on a GaN-on-Si PlatformM Yuan, Q Xie, K Fu, T Hossain, J Niroula, JA Greer, N Chowdhury, ...IEEE Electron Device Letters 43 (11), 1842-1845, 202222022
2-) AlGaN/GaN-Based Multimetal Gated High-Electron-Mobility Transistor With Improved LinearityMT Azad, T Hossain, B Sikder, Q Xie, M Yuan, E Yagyu, KH Teo, ...IEEE Transactions on Electron Devices, 20232023
3-) Fermi-Level Pinning Effect in Gate Region: A Case Study of Multimetal Gated AlGaN/GaN HEMT for High RF LinearityT Hossain, B Sikder, MT Azad, Q Xie, M Yuan, E Yagyu, KH Teo, ...2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 202412024
4-) Efficient Broadband Light Absorption in a Bioinspired Silicon Photonic StructureT Hossain*, AA Mamun*, F Islam, MM HassanThe Journal of Physical Chemistry C 128 (20), 8522–8530, 202412024
5-) System-Technology Co-Optimization of Multimetal Gated AlGaN/GaN HEMT for Improved RF LinearityT Hossain, T Hossain, AKMA Alam, B Sikder, Q Xie, M Yuan, E Yagyu, ...IEEE Journal of the Electron Devices Society, 20242024