Tonghuan Fu

Tonghuan Fu

Center for High Pressure Science &Technology Advanced Research - Shanghai / China
Engineering & Technology / Metallurgical & Materials Engineering
AD Scientific Index ID: 5096118
高压科学技术中心高级研究
person_outline Tonghuan Fu's MOST POPULAR ARTICLES
1-) Reconfiguring band-edge states and charge distribution of organic semiconductor–incorporated 2D perovskites via pressure gatingS Guo, Y Li, Y Mao, W Tao, K Bu, T Fu, C Zhao, H Luo, Q Hu, H Zhu, E Shi, ...Science Advances 8 (44), eadd1984, 2022312022
2-) Manipulating Peierls Distortion in van der Waals NbOX2 Maximizes Second-Harmonic GenerationT Fu, K Bu, X Sun, D Wang, X Feng, S Guo, Z Sun, Y Fang, Q Hu, Y Ding, ...Journal of the American Chemical Society 145 (30), 16828-16834, 2023172023
3-) Anomalous Charge Transfer from Organic Ligands to Metal Halides in Zero‐Dimensional [(C6H5)4P]2SbCl5 Enabled by Pressure‐Induced Lone Pair‐π …H Luo, K Bu, Y Yin, D Wang, C Shi, S Guo, T Fu, J Liang, B Liu, D Zhang, ...Angewandte Chemie International Edition 62 (37), e202304494, 2023152023
4-) Chirality-dependent structural transformation in chiral 2D perovskites under high pressureME Sun, Y Wang, F Wang, J Feng, L Wang, H Gao, G Chen, J Gu, Y Fu, ...Journal of the American Chemical Society 145 (16), 8908-8916, 2023222023
5-) Enhanced Second-Harmonic Generation of van der Waals CuInP2S6 via Pressure-Regulated Cationic DisplacementK Bu, T Fu, Z Du, X Feng, D Wang, Z Li, S Guo, Z Sun, H Luo, G Liu, ...Chemistry of Materials 35 (1), 242-250, 2022202022