Tony E Haynes

Tony E Haynes

Oak Ridge National Laboratory - Oak Ridge / United States
Engineering & Technology / Metallurgical & Materials Engineering
AD Scientific Index ID: 4419042
person_outline Tony E Haynes's MOST POPULAR ARTICLES
1-) Physical mechanisms of transient enhanced dopant diffusion in ion-implanted siliconPA Stolk, HJ Gossmann, DJ Eaglesham, DC Jacobson, CS Rafferty, ...Journal of Applied Physics 81 (9), 6031-6050, 19978961997
2-) Size effects in the structural phase transition of VO2 nanoparticlesR Lopez, TE Haynes, LA Boatner, LC Feldman, RF Haglund JrPhysical Review B 65 (22), 224113, 20024202002
3-) Efficient production of silicon-on-insulator films by co-implantation of He+ with H+A Agarwal, TE Haynes, VC Venezia, OW Holland, DJ EagleshamApplied Physics Letters 72 (9), 1086-1088, 19983571998
4-) Mechanism of silicon exfoliation induced by hydrogen/helium co-implantationMK Weldon, M Collot, YJ Chabal, VC Venezia, A Agarwal, TE Haynes, ...Applied Physics Letters 73 (25), 3721-3723, 19983531998
5-) Photoinduced phase transition in VO2 nanocrystals: ultrafast control of surface-plasmon resonanceM Rini, A Cavalleri, RW Schoenlein, R López, LC Feldman, ...Optics letters 30 (5), 558-560, 20052532005