Tony Schenk

Tony Schenk

Ferroelectric Memory Company - Tokyo / United States
Engineering & Technology / Electrical & Electronic Engineering
AD Scientific Index ID: 4468685
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person_outline Tony Schenk's MOST POPULAR ARTICLES
1-) Physical Mechanisms behind the Field‐Cycling Behavior of HfO2‐Based Ferroelectric CapacitorsM Pešić, FPG Fengler, L Larcher, A Padovani, T Schenk, ED Grimley, ...Advanced Functional Materials 26 (25), 4601-4612, 20164812016
2-) On the structural origins of ferroelectricity in HfO2 thin filmsX Sang, ED Grimley, T Schenk, U Schroeder, JM LeBeauApplied Physics Letters 106 (16), 162905, 20154232015
3-) Stabilizing the ferroelectric phase in doped hafnium oxideM Hoffmann, U Schroeder, T Schenk, T Shimizu, H Funakubo, O Sakata, ...Journal of Applied Physics 118 (7), 072006, 20153932015
4-) Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memoriesJ Muller, TS Boscke, S Muller, E Yurchuk, P Polakowski, J Paul, D Martin, ...Electron Devices Meeting (IEDM), 2013 IEEE International, 10.8. 1-10.8. 4, 20135182013
5-) Structural Changes Underlying Field‐Cycling Phenomena in Ferroelectric HfO2 Thin FilmsED Grimley, T Schenk, X Sang, M Pešić, U Schroeder, T Mikolajick, ...Advanced Electronic Materials 2 (9), 1600173, 2016