Trong Huynh-Bao

Taiwan Semiconductor Manufacturing Company Ltd. - Hsinchu / Taiwan

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AD Scientific Index ID: 4383794

台湾半导体制造公司有限公司

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Trong Huynh-Bao's MOST POPULAR ARTICLES

1-) Vertical GAAFETs for the Ultimate CMOS ScalingD Yakimets, G Eneman, T Huynh-Bao, P Schuddinck, MG Bardon, ...Electron Devices, IEEE Transactions on 62 (5), 1433-1439, 20151812015

2-) The Complementary FET (CFET) for CMOS scaling beyond N3J Ryckaert, P Schuddinck, P Weckx, G Bouche, B Vincent, J Smith, ...2018 IEEE Symposium on Vlsi Technology, 141-142, 2018702018

3-) Nanowire & nanosheet FETs for ultra-scaled, high-density logic and memory applicationsA Veloso, T Huynh-Bao, P Matagne, D Jang, G Eneman, N Horiguchi, ...Solid-State Electronics 168, 107736, 2020502020

4-) Enablement of STT-MRAM as last level cache for the high performance computing domain at the 5nm nodeS Sakhare, M Perumkunnil, T Huynh-Bao, S Rao, W Kim, D Crotti, F Yasin, ...2018 IEEE International Electron Devices Meeting (IEDM), 18.3. 1-18.3. 4, 2018762018

5-) Vertical device architecture for 5nm and beyond: Device & circuit implicationsAVY Thean, D Yakimets, T Huynh-Bao, P Schuddinck, S Sakhare, ...2015 Symposium on VLSI Technology (VLSI Technology), T26-T27, 2015622015

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