Vasanthan Thirunavukkarasu

Vasanthan Thirunavukkarasu

Institute of Chemistry, Academia Sinica - Taipei / Taiwan
Engineering & Technology / Electrical & Electronic Engineering
AD Scientific Index ID: 5713919
person_outline Vasanthan Thirunavukkarasu's MOST POPULAR ARTICLES
1-) Performance of inversion, accumulation, and junctionless mode n-type and p-type bulk silicon FinFETs with 3-nm gate lengthV Thirunavukkarasu, YR Jhan, YB Liu, YC WuIEEE electron device letters 36 (7), 645-647, 2015672015
2-) Performance evaluation of silicon and germanium ultrathin body (1 nm) junctionless field-effect transistor with ultrashort gate length (1 nm and 3 nm)YR Jhan, V Thirunavukkarasu, CP Wang, YC WuIEEE Electron Device Letters 36 (7), 654-656, 2015422015
3-) Analysis of Ge-Si heterojunction nanowire tunnel FET: impact of tunneling window of band-to-band tunneling modelED Kurniawan, SY Yang, V Thirunavukkarasu, YC WuJournal of The Electrochemical Society 164 (11), E3354, 2017362017
4-) Nano-electronic Simulation Software (NESS): a flexible nano-device simulation platformS Berrada, H Carrillo-Nunez, J Lee, C Medina-Bailon, T Dutta, O Badami, ...Journal of Computational Electronics 19, 1031-1046, 2020342020
5-) Gate-all-around junctionless silicon transistors with atomically thin nanosheet channel (0.65 nm) and record sub-threshold slope (43 mV/dec)V Thirunavukkarasu, YR Jhan, YB Liu, ED Kurniawan, YR Lin, SY Yang, ...Applied Physics Letters 110 (3), 2017292017