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Ved Gund
Honeywell International Inc. - Charlotte / United States
Engineering & Technology / Aerospace Engineering
AD Scientific Index ID: 5214193
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Ved Gund's MOST POPULAR ARTICLES
1-)
CMOS-integrated aluminum nitride MEMS: A reviewRMR Pinto, V Gund, RA Dias, KK Nagaraja, KB VinayakumarJournal of Microelectromechanical Systems 31 (4), 500-523, 2022442022
2-)
Piezoelectric aluminum nitride thin-films: A review of wet and dry etching techniquesRMR Pinto, V Gund, C Calaza, KK Nagaraja, KB VinayakumarMicroelectronic Engineering 257, 111753, 2022422022
3-)
Epitaxial ScxAl1− xN on GaN exhibits attractive high-K dielectric propertiesJ Casamento, H Lee, T Maeda, V Gund, K Nomoto, L van Deurzen, ...Applied Physics Letters 120 (15), 2022242022
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Temperature-dependent Lowering of Coercive Field in 300 nm Sputtered Ferroelectric Al0.70Sc0.30NV Gund, B Davaji, H Lee, MJ Asadi, J Casamento, HG Xing, D Jena, A Lal2021 IEEE International Symposium on Applications of Ferroelectrics (ISAF), 1-3, 2021222021
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Towards realizing the low-coercive field operation of sputtered ferroelectric ScxAl1-xNV Gund, B Davaji, H Lee, J Casamento, HG Xing, D Jena, A Lal2021 21st International Conference on Solid-State Sensors, Actuators and …, 2021192021
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