Walt Johnson|Walter Johnson, Walter H Johnson III, W H Johnson

Walt Johnson|Walter Johnson, Walter H Johnson III, W H Johnson

KLA - / United States
Business & Management / Communications and Media Studies
AD Scientific Index ID: 5717580
person_outline Walt Johnson|Walter Johnson, Walter H Johnson III, W H Johnson's MOST POPULAR ARTICLES
1-) P, Sb and Sn ion implantation with laser melt-LPC (liquid phase crystallization) for high activation n+ ultra shallow junction in Ge epilayer and surface strain-Ge formation …J Borland, J Herman, S Novak, H Onoda, Y Nakashima, K Huet, ...2015 15th International Workshop on Junction Technology (IWJT), 15-18, 201552015
2-) High mobility Ge-channel formation by localized/selective liquid phase epitaxy (LPE) using Ge+ B plasma ion implantation and laser melt annealingJ Borland, S Qin, P Oesterlin, K Huet, W Johnson, L Klein, G Goodman, ...2013 13th International Workshop on Junction Technology (IWJT), 49-53, 201352013
3-) Consideration of in-line qualification for ultrashallow junction implantationW Boyd Jr, M Lee, D Wagner, T Romig, J Bennett, L Larson, W Johnson, ...Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 199851998
4-) 22nm node p+ junction scaling using B36H44 and laser annealing with or W/O PAIJ Borland, M Tanjyo, N Hamamoto, T Nagayama, S Muthukrishnan, ...2009 17th International Conference on Advanced Thermal Processing of …, 200942009
5-) Liquid Phase Epitaxy (LPE) Formation of Localized High Quality and Mobility Ge & SiGe by High Dose Ge-Implantation with Laser Melt Annealing for 10nm and 7nm Node CMOS TechnologyJO Borland, M Sugitani, P Oesterlin, W Johnson, T Buyuklimanli, ...ECS Transactions 64 (6), 127, 201432014