Wanjun Chen

Wanjun Chen

University of Electronic Science & Technology of China - Chengdu / China
Engineering & Technology / Electrical & Electronic Engineering
AD Scientific Index ID: 679181
电子科技大学
person_outline Wanjun Chen's MOST POPULAR ARTICLES
1-) Integrated HEMT and lateral field-effect rectifier combinations, methods, and systems US Patent 8,076,699, 2011
2-) GaN power integration for high frequency and high efficiency power applications: A review Ieee Access 8, 15529-15542, 2020
3-) High-performance AlGaN∕ GaN lateral field-effect rectifiers compatible with high electron mobility transistors Applied physics letters 92 (25), 2008
4-) Single-chip boost converter using monolithically integrated AlGaN/GaN lateral field-effect rectifier and normally off HEMT Electron Device Letters, IEEE 30 (5), 430-432, 2009
5-) 7.6 V Threshold Voltage High Performance Normally-off Al2O3/GaN MOSFET Achieved by Interface Charge Engineering IEEE, 2016