Weifeng SUN

Weifeng SUN

Southeast University - Nanjing / China
Engineering & Technology / Electrical & Electronic Engineering
AD Scientific Index ID: 677455
东南大学
person_outline Weifeng SUN's MOST POPULAR ARTICLES
1-) Transverse ultra-thin insulated gate bipolar transistor having high current density US Patent 9,240,469, 2016
2-) Repetitive unclamped-inductive-switching-induced electrical parameters degradations and simulation optimizations for 4H-SiC MOSFETs IEEE Transactions on Electron Devices 63 (11), 4331-4338, 2016
3-) An improved quadrangle control method for four-switch buck-boost converter with reduced loss and decoupling strategy IEEE Transactions on Power Electronics 36 (9), 10827-10841, 2021
4-) Comprehensive analysis of electrical parameters degradations for SiC power MOSFETs under repetitive short-circuit stress IEEE Transactions on Electron Devices 65 (12), 5440-5447, 2018
5-) Comprehensive Investigations on Degradations of Dynamic Characteristics for SiC Power MOSFETs Under Repetitive Avalanche Shocks IEEE Transactions on Power Electronics 34 (3), 2748-2757, 2018