William Gallagher

William Gallagher

Taiwan Semiconductor Manufacturing Company Ltd. - Hsinchu / Taiwan
Engineering & Technology / Metallurgical & Materials Engineering
AD Scientific Index ID: 4384460
台湾半导体制造公司有限公司
person_outline William Gallagher's MOST POPULAR ARTICLES
1-) Exchange-biased magnetic tunnel junctions and application to nonvolatile magnetic random access memorySSP Parkin, KP Roche, MG Samant, PM Rice, RB Beyers, ...Journal of Applied Physics 85 (8), 5828-5833, 199914831999
2-) Experimental evidence for vortex-glass superconductivity in Y-Ba-Cu-ORH Koch, V Foglietti, WJ Gallagher, G Koren, A Gupta, MPA FisherPhysical review letters 63 (14), 1511, 198911831989
3-) Magnetic response of a single, isolated gold loopV Chandrasekhar, RA Webb, MJ Brady, MB Ketchen, WJ Gallagher, ...Physical review letters 67 (25), 3578, 19919851991
4-) Magnetic memory array using magnetic tunnel junction devices in the memory cellsWJ Gallagher, JH Kaufman, SSP Parkin, RE ScheuerleinUS Patent 5,640,343, 19978801997
5-) Direct observation of electronic anisotropy in single-crystal Y 1 Ba 2 Cu 3 O 7− xTR Dinger, TK Worthington, WJ Gallagher, RL SandstromPhysical review letters 58 (25), 2687, 19878201987