William Vandenberghe

William Vandenberghe

University of Texas Dallas - Richardson / United States
Engineering & Technology / Electrical & Electronic Engineering
AD Scientific Index ID: 1677394
The University of Texas at Dallas
person_outline William Vandenberghe's MOST POPULAR ARTICLES
1-) Dielectric properties of hexagonal boron nitride and transition metal dichalcogenides: from monolayer to bulkA Laturia, ML Van de Put, WG Vandenberghenpj 2D Materials and Applications 2 (1), 1-7, 20184722018
2-) Direct and Indirect Band-to-Band Tunneling in Germanium-Based TFETsKH Kao, AS Verhulst, WG Vandenberghe, B Sorée, G Groeseneken, ...Electron Devices, IEEE Transactions on 59 (2), 292-301, 20114812011
3-) Tunnel field-effect transistor without gate-drain overlapAS Verhulst, WG Vandenberghe, K Maex, G GroesenekenApplied Physics Letters 91 (5), 20074802007
4-) Modeling the single-gate, double-gate, and gate-all-around tunnel field-effect transistorAS Verhulst, B Sorée, D Leonelli, WG Vandenberghe, G GroesenekenJournal of Applied Physics 107 (2), 20102812010
5-) Complementary silicon-based heterostructure tunnel-FETs with high tunnel ratesAS Verhulst, WG Vandenberghe, K Maex, S De Gendt, MM Heyns, ...IEEE electron device letters 29 (12), 1398-1401, 20082202008