Wilman Tsai

Wilman Tsai

Stanford University - Stanford / United States
Engineering & Technology / Metallurgical & Materials Engineering
AD Scientific Index ID: 1650930
person_outline Wilman Tsai's MOST POPULAR ARTICLES
1-) Chloride Molecular Doping Technique on 2D Materials: WS2 and MoS2 Nano letters 14 (11), 6275-6280, 2014
2-) Forming a type I heterostructure in a group IV semiconductor US Patent 7,435,987, 2008
3-) Characterization of ALCVD-Al2O3 and ZrO2 layer using X-ray photoelectron spectroscopy Journal of non-crystalline solids 303 (1), 83-87, 2002
4-) Germanium n-type shallow junction activation dependences Applied Physics Letters 87 (9), 2005
5-) Metal-oxide-semiconductor capacitors on GaAs with high-k gate oxide and amorphous silicon interface passivation layer Applied physics letters 88 (2), 2006