Xianan Cao Xa Cao

Xianan Cao Xa Cao

West Virginia University - Morgantown / United States
Engineering & Technology / Electrical & Electronic Engineering
AD Scientific Index ID: 940850
person_outline Xianan Cao Xa Cao's MOST POPULAR ARTICLES
1-) Homoepitaxial gallium-nitride-based light emitting device and method for producingMP D\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\'evelyn, NA Evers, SF Leboeuf, XA Cao, AP ZhangUS Patent 7,053,413, 20064412006
2-) Resonant cavity light emitting devices and associated methodMP D\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\'evelyn, XA Cao, A Zhang, SF Leboeuf, H Hong, DS Park, KJ NarangUS Patent 7,582,498, 20093112009
3-) Diffusion and tunneling currents in GaN/InGaN multiple quantum well light-emitting diodesXA Cao, EB Stokes, PM Sandvik, SF LeBoeuf, J Kretchmer, D WalkerIEEE Electron Device Letters 23 (9), 535-537, 20022682002
4-) Electrical effects of plasma damage in XA Cao, SJ Pearton, AP Zhang, GT Dang, F Ren, RJ Shul, L Zhang, ...Applied physics letters 75 (17), 2569-2571, 19992611999
5-) Defect generation in InGaN/GaN light-emitting diodes under forward and reverse electrical stressesXA Cao, PM Sandvik, SF LeBoeuf, SD ArthurMicroelectronics Reliability 43 (12), 1987-1991, 20032032003