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Xilun Chi
Kyoto University - Kyoto / Japan
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AD Scientific Index ID: 5790373
京都大学
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Xilun Chi's MOST POPULAR ARTICLES
1-)
Experimental determination of impact ionization coefficients along< 1120> in 4H-SiCD Stefanakis, X Chi, T Maeda, M Kaneko, T KimotoIEEE Transactions on Electron Devices 67 (9), 3740-3744, 2020182020
2-)
Tunneling current in 4H-SiC pn junction diodesM Kaneko, X Chi, T KimotoIEEE Transactions on Electron Devices 67 (8), 3329-3334, 2020142020
3-)
Phonon-assisted optical absorption due to Franz–Keldysh effect in 4H-SiC p–n junction diode under high reverse bias voltageT Maeda, X Chi, M Horita, J Suda, T KimotoApplied Physics Express 11 (9), 091302, 201892018
4-)
Different temperature dependence of mobility in n-and p-channel 4H-SiC MOSFETsX Chi, K Tachiki, K Mikami, M Kaneko, T KimotoJapanese Journal of Applied Physics 62 (11), 110906, 202352023
5-)
Physics and Innovative technologies in SiC power devicesT Kimoto, M Kaneko, K Tachiki, K Ito, R Ishikawa, X Chi, D Stefanakis, ...2021 IEEE International Electron Devices Meeting (IEDM), 36.1. 1-36.1. 4, 202152021
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