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Xun Zheng
University of California Santa Barbara - Santa Barbara / United States
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AD Scientific Index ID: 1833238
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Xun Zheng's MOST POPULAR ARTICLES
1-)
Demonstration of β-(AlxGa1− x) 2O3/β-Ga2O3 modulation doped field-effect transistors with Ge as dopant grown via plasma-assisted molecular beam epitaxyE Ahmadi, OS Koksaldi, X Zheng, T Mates, Y Oshima, UK Mishra, ...Applied Physics Express 10 (7), 071101, 20171822017
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Demonstration of constant 8 W/mm power density at 10, 30, and 94 GHz in state-of-the-art millimeter-wave N-polar GaN MISHEMTsB Romanczyk, S Wienecke, M Guidry, H Li, E Ahmadi, X Zheng, S Keller, ...IEEE Transactions on Electron Devices 65 (1), 45-50, 20171412017
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N-polar GaN cap MISHEMT with record power density exceeding 6.5 W/mm at 94 GHzS Wienecke, B Romanczyk, M Guidry, H Li, E Ahmadi, K Hestroffer, ...IEEE Electron Device Letters 38 (3), 359-362, 2017872017
4-)
W-band power performance of SiN-passivated N-polar GaN deep recess HEMTsB Romanczyk, X Zheng, M Guidry, H Li, N Hatui, C Wurm, A Krishna, ...IEEE Electron Device Letters 41 (3), 349-352, 20201132020
5-)
N-polar GaN MIS-HEMTs on sapphire with high combination of power gain cutoff frequency and three-terminal breakdown voltageX Zheng, M Guidry, H Li, E Ahmadi, K Hestroffer, B Romanczyk, ...IEEE Electron Device Letters 37 (1), 77-80, 2015512015
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