Yanfeng Ge

Yanfeng Ge

Yanshan University - Qinhuangdao / China
Engineering & Technology / Electrical & Electronic Engineering
AD Scientific Index ID: 745302
燕山大学
person_outline Yanfeng Ge's MOST POPULAR ARTICLES
1-) First-principles demonstration of superconductivity at 280 K in hydrogen sulfide with low phosphorus substitutionY Ge, F Zhang, Y YaoPhysical Review B 93 (22), 224513, 20161032016
2-) Sulfur-doped black phosphorus field-effect transistors with enhanced stabilityW Lv, B Yang, B Wang, W Wan, Y Ge, R Yang, C Hao, J Xiang, B Zhang, ...ACS applied materials & interfaces 10 (11), 9663-9668, 2018922018
3-) The strain effect on superconductivity in phosphorene: a first-principles predictionY Ge, W Wan, F Yang, Y YaoNew Journal of Physics 17 (3), 035008, 2015892015
4-) Effect of doping and strain modulations on electron transport in monolayer Y Ge, W Wan, W Feng, D Xiao, Y YaoPhysical Review B 90 (3), 035414, 2014792014
5-) Hole-doped room-temperature superconductivity in H3S1-xZx (Z= C, Si)Y Ge, F Zhang, RP Dias, RJ Hemley, Y YaoMaterials Today Physics 15, 100330, 2020732020