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Yang K
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Korea Advanced Institute of Science & Technology KAIST - Daejeon / South Korea
한국 고급 과학 기술 연구소 KAIST
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Yang K's MOST POPULAR ARTICLES
1-)
Numerical modeling of abrupt heterojunctions using a thermionic-field emission boundary conditionK Yang, JR East, GI HaddadSolid-State Electronics 36 (3), 321-330, 19932541993
2-)
In Vivo Silicon-Based Flexible Radio Frequency Integrated Circuits Monolithically Encapsulated with Biocompatible Liquid Crystal PolymersGT Hwang, D Im, SE Lee, J Lee, M Koo, SY Park, S Kim, K Yang, SJ Kim, ...Acs Nano 7 (5), 4545-4553, 20131132013
3-)
Gallium nitride high electron mobility transistor having inner field-plate for high power applicationsK Yang, S Lee, K Lee, K KoUS Patent App. 11/716,446, 20081002008
4-)
Design, modeling, and characterization of monolithically integrated InP-based (1.55/spl mu/m) high-speed (24 Gb/s) pin/HBT front-end photoreceiversK Yang, AL Gutierrez-Aitken, X Zhang, GI Haddad, P BhattacharyaJournal of lightwave technology 14 (8), 1831-1839, 19961001996
5-)
High-efficiency class-A power amplifiers with a dual-bias-control schemeK Yang, GI Haddad, JR EastIEEE Transactions on Microwave Theory and Techniques 47 (8), 1426-1432, 1999971999
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