Yasuhisa Omura

Yasuhisa Omura

Kansai University - Suita / Japan
Engineering & Technology / Electrical & Electronic Engineering
AD Scientific Index ID: 341015
関西大学
person_outline Yasuhisa Omura's MOST POPULAR ARTICLES
1-) Quantum-mechanical effects on the threshold voltage of ultrathin-SOI nMOSFETsY Omura, S Horiguchi, M Tabe, K KishiIEEE Electron Device Letters 14 (12), 569-571, 19933031993
2-) 0.1-mu m-gate, ultrathin-film CMOS devices using SIMOX substrate with 80-nm-thick buried oxide layerY Omura, S Nakashima, K Izumi, T IshiiIEEE transactions on electron devices 40 (5), 1019-1022, 19931341993
3-) Method of manufacturing SOI semiconductor elementY Omura, Y Kunii, K IzumiUS Patent 5,188,973, 1993921993
4-) 50-nm channel nMOSFET/SIMOX with an ultrathin 2-or 6-nm thick silicon layer and their significant features of operationsY Omura, K Kurihara, Y Takahashi, T Ishiyama, Y Nakajima, K IzumiIEEE Electron Device Letters 18 (5), 190-193, 1997651997
5-) Low-power 1/2 frequency dividers using 0.1-mu m CMOS circuits built with ultrathin SIMOX substratesM Fujishima, K Asada, Y Omura, K IzumiIEEE journal of solid-state circuits 28 (4), 510-512, 1993591993