Yohei Nakamura

Yohei Nakamura

Rohm - Kyoto / Japan
Engineering & Technology / Electrical & Electronic Engineering
AD Scientific Index ID: 4970084
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person_outline Yohei Nakamura's MOST POPULAR ARTICLES
1-) Surface-potential-based silicon carbide power MOSFET model for circuit simulation M Shintani, Y Nakamura, K Oishi, M Hiromoto, T Hikihara, T Sato IEEE Transactions on Power Electronics 33 (12), 10774-10783, 2018 262018
2-) A simulation model for SiC power MOSFET based on surface potential Y Nakamura, M Shintani, K Oishi, T Sato, T Hikihara 2016 International Conference on Simulation of Semiconductor Processes and …, 2016 212016
3-) A high power curve tracer for characterizing full operational range of SiC power transistorsY Nakamura, M Shintani, T Sato, T Hikihara2016 International Conference on Microelectronic Test Structures (ICMTS), 90-94, 2016182016
4-) Measurement and modeling of gate–drain capacitance of silicon carbide vertical double-diffused MOSFETM Shintani, Y Nakamura, M Hiromoto, T Hikihara, T SatoJapanese Journal of Applied Physics 56 (4S), 04CR07, 2017182017
5-) Electrothermal Cosimulation for Predicting the Power Loss and Temperature of SiC MOSFET Dies Assembled in a Power ModuleY Nakamura, TM Evans, N Kuroda, H Sakairi, Y Nakakohara, H Otake, ...IEEE Transactions on Power Electronics 35 (3), 2950-2958, 2019132019