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Yoshinari Kamakura
Osaka Institute of Technology - Osaka / Japan
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AD Scientific Index ID: 424193
大阪工業大学
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Yoshinari Kamakura's MOST POPULAR ARTICLES
1-)
A Monte Carlo simulation of anisotropic electron transport in silicon including full band structure and anisotropic impact‐ionization modelT Kunikiyo, M Takenaka, Y Kamakura, M Yamaji, H Mizuno, M Morifuji, ...Journal of Applied Physics 75 (1), 297-312, 19942141994
2-)
Impact ionization model for full band Monte Carlo simulationY Kamakura, H Mizuno, M Yamaji, M Morifuji, K Taniguchi, C Hamaguchi, ...Journal of applied physics 75 (7), 3500-3506, 19941311994
3-)
Electron mobility calculation for graphene on substratesH Hirai, H Tsuchiya, Y Kamakura, N Mori, M OgawaJournal of Applied Physics 116 (8), 083703, 2014962014
4-)
Methodology of thermoelectric power factor enhancement by controlling nanowire interfaceT Ishibe, A Tomeda, K Watanabe, Y Kamakura, N Mori, N Naruse, Y Mera, ...ACS applied materials & interfaces 10 (43), 37709-37716, 2018972018
5-)
A comparison of numerical solutions of the Boltzmann transport equation for high-energy electron transport siliconA Abramo, L Baudry, R Brunetti, R Castagne, M Charef, F Dessenne, ...IEEE Transactions on Electron Devices 41 (9), 1646-1654, 1994901994
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