Yu Fu

Yu Fu

University of Electronic Science & Technology of China - Chengdu / China
Engineering & Technology / Electrical & Electronic Engineering
AD Scientific Index ID: 4754984
电子科技大学
person_outline Yu Fu's MOST POPULAR ARTICLES
1-) C–Si bonded two-dimensional hole gas diamond MOSFET with normally-off operation and wide temperature range stability Carbon 175, 525-533, 2021
2-) Performance comparison of GaN HEMTs on diamond and SiC substrates based on surface potential model ECS Journal of Solid State Science and Technology 6 (12), Q171, 2017
3-) MOSFETs on (110) C–H diamond: ALD Al₂O₃/diamond interface analysis and high performance normally-OFF operation realization IEEE Transactions on Electron Devices 69 (3), 949-955, 2022
4-) C-Si interface on SiO2/(1 1 1) diamond p-MOSFETs with high mobility and excellent normally-off operation Applied Surface Science 593, 153368, 2022
5-) Characterization and modeling of hydrogen-terminated MOSFETs with single-crystal and polycrystalline diamond IEEE Electron Device Letters 39 (11), 1704-1707, 2018