Yuanzheng Yue

Yuanzheng Yue

Arizona State University - Tempe / United States
Engineering & Technology / Electrical & Electronic Engineering
AD Scientific Index ID: 805937
person_outline Yuanzheng Yue's MOST POPULAR ARTICLES
1-) InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts andof 370 GHzY Yue, Z Hu, J Guo, B Sensale-Rodriguez, G Li, R Wang, F Faria, T Fang, ...IEEE Electron Device Letters 33 (7), 988-990, 20123742012
2-) AlGaN/GaN MOS-HEMT WithDielectric andInterfacial Passivation Layer Grown by Atomic Layer DepositionY Yue, Y Hao, J Zhang, J Ni, W Mao, Q Feng, L LiuIEEE electron device letters 29 (8), 838-840, 20081612008
3-) Ultrascaled InAlN/GaN high electron mobility transistors with cutoff frequency of 400 GHzY Yue, Z Hu, J Guo, B Sensale-Rodriguez, G Li, R Wang, F Faria, B Song, ...Japanese Journal of Applied Physics 52 (8S), 08JN14, 20131092013
4-) Quaternary Barrier InAlGaN HEMTs With of 230/300 GHzR Wang, G Li, G Karbasian, J Guo, B Song, Y Yue, Z Hu, O Laboutin, ...IEEE electron device letters 34 (3), 378-380, 2013792013
5-) Ultrathin body GaN-on-insulator quantum well FETs with regrown ohmic contactsG Li, R Wang, J Guo, J Verma, Z Hu, Y Yue, F Faria, Y Cao, M Kelly, ...IEEE electron device letters 33 (5), 661-663, 2012572012