Yufang Xie

Yufang Xie

Helmholtz-Zentrum Dresden-Rossendorf - Dresden / Germany
Engineering & Technology / Electrical & Electronic Engineering
AD Scientific Index ID: 4584440
Helmholtz Center Dresden-Rossendorf
person_outline Yufang Xie's MOST POPULAR ARTICLES
1-) Semiconducting ZnSnN2 thin films for Si/ZnSnN2 p-n junctionsR Qin, H Cao, L Liang, Y Xie, F Zhuge, H Zhang, J Gao, K Javaid, C Liu, ...Applied Physics Letters 108 (14), 142104, 2016562016
2-) Breaking the doping limit in silicon by deep impuritiesM Wang, A Debernardi, Y Berencén, R Heller, C Xu, Y Yuan, Y Xie, ...Physical Review Applied 11 (5), 054039, 2019512019
3-) Structural and optical properties of pulsed-laser deposited crystalline β-Ga2O3 thin films on siliconY Berencén, Y Xie, M Wang, S Prucnal, L Rebohle, S ZhouSemiconductor Science and Technology 34 (3), 035001, 2019492019
4-) Irradiation effects on the structural and optical properties of single crystal β-Ga2O3C Liu, Y Berencén, J Yang, Y Wei, M Wang, Y Yuan, C Xu, Y Xie, X Li, ...Semiconductor Science and Technology 33 (9), 095022, 2018442018
5-) Silicon‐based intermediate‐band infrared photodetector realized by Te hyperdopingM Wang, E García‐Hemme, Y Berencen, R Hübner, Y Xie, L Rebohle, ...Advanced Optical Materials 9 (4), 2001546, 2021362021