Yung Fu Alfred Chong

Yung Fu Alfred Chong

GlobalFoundries - New York / United States
Others
AD Scientific Index ID: 5050627
person_outline Yung Fu Alfred Chong's MOST POPULAR ARTICLES
1-) Dopant distribution in the recrystallization transient at the maximum melt depth induced by laser annealing KK Ong, KL Pey, PS Lee, ATS Wee, XC Wang, YF Chong Applied physics letters 89 (17), 2006 2842006
2-) Method to control source/drain stressor profiles for stress engineering YF Chong, Z Luo, JR Holt US Patent 8,017,487, 2011 1292011
3-) Formation of raised source/drain structures in NFET with embedded SiGe in PFET YF Chong, Z Luo, JC Kim, JR Holt US Patent 7,718,500, 2010 1012010
4-) Annealing of ultrashallow junction by 248 nm excimer laser and rapid thermal processing with different preamorphization depthsYF Chong, KL Pey, ATS Wee, A See, L Chan, YF Lu, WD Song, LH ChuaApplied Physics Letters 76 (22), 3197-3199, 2000992000
5-) Method for engineering hybrid orientation/material semiconductor substrateY Chong, L Hsia, C AngUS Patent App. 10/990,180, 2006792006