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Yusuf Tarauni
Kano University of Science & Technology Wudil - Wudil / Nigeria
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AD Scientific Index ID: 5807771
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Yusuf Tarauni's MOST POPULAR ARTICLES
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Characterization and optimization of MIS-HEMTs device of high~ k dielectric material on quaternary barrier of Al0. 42ln0. 03Ga0. 55N/UID-AIN/GaN/GaN heterostructure for high …YU Tarauni, DJ Thiruvadigal, HB JosephApplied Surface Science 488, 427-433, 2019112019
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Simulation study of gated nanowire InAs/Si Hetero p channel TFET and effects of interface trapHB Joseph, SK Singh, RM Hariharan, Y Tarauni, DJ ThiruvadigalMaterials Science in Semiconductor Processing 103, 104605, 2019102019
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Optimization of enhancement mode P-type Mg-doped In0. 2Ga0. 8N cap gate DH-HEMT for low-loss high power efficient boost converter circuitsYU Tarauni, DJ Thiruvadigal, B Joseph, A MohanbabuMaterials Science in Semiconductor Processing 103, 104624, 201962019
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A comparative analysis of GaN and InGaN/GaN coupling channel HEMTs on silicon carbide substrate for high linear RF applicationsP Murugapandiyan, SRK Kalva, V Rajyalakshmi, BA Princy, YU Tarauni, ...Micro and Nanostructures 177, 207545, 202342023
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Influence Analysis of Back-Barrier and AIN Substrate on the High-Temperature Performance of an E-Mode Mg-Doped In0.2Ga0.8N Capped Gate High Electron Mobility Transistor for …YU Tarauni, ...Journal of Electronic Materials, 202212022
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