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Zeyuan Ni
Tokyo Electron - Tokyo / Japan
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AD Scientific Index ID: 4969861
東京エレクトロン
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Zeyuan Ni's MOST POPULAR ARTICLES
1-)
Tunable bandgap in silicene and germanene Z Ni, Q Liu, K Tang, J Zheng, J Zhou, R Qin, Z Gao, D Yu, J Lu Nano letters 12 (1), 113-118, 2012 13282012
2-)
Interfacial Properties of Monolayer and Bilayer MoS2 Contacts with Metals: Beyond the Energy Band CalculationsH Zhong, R Quhe, Y Wang, Z Ni, M Ye, Z Song, Y Pan, J Yang, L Yang, ...Scientific reports 6 (1), 21786, 20163102016
3-)
Tunable and sizable band gap in silicene by surface adsorptionR Quhe, R Fei, Q Liu, J Zheng, H Li, C Xu, Z Ni, Y Wang, D Yu, Z Gao, ...Scientific reports 2 (1), 853, 20123042012
4-)
Does p-type ohmic contact exist in WSe 2–metal interfaces?Y Wang, RX Yang, R Quhe, H Zhong, L Cong, M Ye, Z Ni, Z Song, J Yang, ...Nanoscale 8 (2), 1179-1191, 20162012016
5-)
Tunable band gap and doping type in silicene by surface adsorption: towards tunneling transistorsZ Ni, H Zhong, X Jiang, R Quhe, G Luo, Y Wang, M Ye, J Yang, J Shi, J LuNanoscale 6 (13), 7609-7618, 20141952014
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