NEWS
Free Institutional Consultancy Services
New Feature: Compare Your Institution with the Previous Year
Find a Professional: Explore Experts Across 197 Disciplines in 220 Countries!
Find a Professional
Print Your Certificate
New! Young University / Institution Rankings 2025
New! Art & Humanities Rankings 2025
New! Social Sciences and Humanities Rankings 2025
Highly Cited Researchers 2025
AD
Scientific Index 2025
Scientist Rankings
University Rankings
Subject Rankings
Country Rankings
login
Login
person_add
Register
insights
H-Index Rankings
insights
i10 Productivity Rankings
format_list_numbered
Citation Rankings
subject
University Subject Rankings
school
Young Universities
format_list_numbered
Top 100 Scientists
format_quote
Top 100 Institutions
format_quote
Compare & Choose
local_fire_department
Country Reports
person
Find a Professional
Zhaoqiang Bai
Western Digital Corporation - San Jose / United States
Others
AD Scientific Index ID: 4980724
Registration, Add Profile,
Premium Membership
Print Your Certificate
Ranking &
Analysis
Job
Experiences (0)
Education
Information (0)
Published Books (0)
Book Chapters (0)
Articles (0)
Presentations (0)
Lessons (0)
Projects (0)
Subject Leaders
Editorship, Referee &
Scientific Board (0 )
Patents /
Designs (0)
Academic Grants
& Awards (0)
Artistic
Activities (0)
Certificate / Course
/ Trainings (0)
Association &
Society Memberships (0)
Contact, Office
& Social Media
person_outline
Zhaoqiang Bai's MOST POPULAR ARTICLES
1-)
Data storage: review of Heusler compounds Z Bai, LEI Shen, G Han, YP Feng Spin 2 (04), 1230006, 2012 782012
2-)
Interface controlled thermal resistances of ultra-thin chalcogenide-based phase change memory devicesK Aryana, JT Gaskins, J Nag, DA Stewart, Z Bai, S Mukhopadhyay, ...Nature Communications 12 (1), 774, 2021672021
3-)
Magnetic and transport properties of Mn3− xGa/MgO/Mn3− xGa magnetic tunnel junctions: A first-principles studyZ Bai, Y Cai, L Shen, M Yang, V Ko, G Han, Y FengApplied Physics Letters 100 (2), 2012662012
4-)
Constructing metallic nanoroads on a MoS 2 monolayer via hydrogenationY Cai, Z Bai, H Pan, YP Feng, BI Yakobson, YW ZhangNanoscale 6 (3), 1691-1697, 2014582014
5-)
Efficient spin injection into graphene through a tunnel barrier: overcoming the spin-conductance mismatchQ Wu, L Shen, Z Bai, M Zeng, M Yang, Z Huang, YP FengPhysical Review Applied 2 (4), 044008, 2014532014
ARTICLES
Add your articles
We use cookies to personalize our website and offer you a better experience. If you accept cookies, we can offer you special services.
Cookie Policy
Accept