Zongyang Hu

Zongyang Hu

Cornell University - Ithaca / United States
Engineering & Technology / Electrical & Electronic Engineering
AD Scientific Index ID: 1296578
person_outline Zongyang Hu's MOST POPULAR ARTICLES
1-) Enhancement-Mode Ga2O3Vertical Transistors With Breakdown Voltage >1 kV IEEE Electron Device Letters 39 (6), 869-872, 2018
2-) Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN pn diodes with avalanche breakdown Applied Physics Letters 107 (24), 2015
3-) Breakdown mechanism in 1 kA/cm2 and 960 V E-mode β-Ga2O3 vertical transistors Applied Physics Letters 113 (12), 2018
4-) 2.44 kV Ga2O3 vertical trench Schottky barrier diodes with very low reverse leakage current 2018 IEEE International Electron Devices Meeting (IEDM), 8.5. 1-8.5. 4, 2018
5-) 1.7-kV and 0.55- GaN p-n Diodes on Bulk GaN Substrates With Avalanche CapabilityK Nomoto, B Song, Z Hu, M Zhu, M Qi, N Kaneda, T Mishima, T Nakamura, ...IEEE Electron Device Letters 37 (2), 161-164, 20152082015